Sharp Lateral Graphene p-n Junctions

Presenter(s)

Jackson Butler

Abstract or Description

2d devices made from van der Waals materials require clean and uniform doping. However, most common techniques used to dope 2d materials either are limited in the carrier densities they can induce or can degrade sample quality. Recently we discovered that the layered Mott insulator α-RuCl₃ can strongly charge dope graphene, inducing a large population of holes of order a few 10¹³ cm^-2 when placed in direct contact. Fortuitously, the graphene is found to maintain a high mobility, achieving the highest reported value at such large, induced densities. We have been able to utilize this charge transfer to create sharp lateral p-n junctions in the graphene. The p-n junction lies at the boundary between two differentially doped regions of the graphene where one side is intrinsic, and the other side is modulation doped by proximity to α-RuCl₃. In this talk, we discuss particulars of the charge transfer between α-RuCl₃ and graphene, and report evidence of sharp lateral p-n junctions through the use of electronic transport.