Ti/Au Contacts on epsilon gallium oxide (ε-Ga2O3)

Presenter(s)

Stuart Kusdono

Abstract or Description

Gallium oxide (Ga2O3) is a wide-bandgap semiconductor that has many desirable properties for use in high-power and energy-efficient devices. Crucial to its performance are Ohmic contacts, which are metal layers deposited on semiconductors that allow current to flow into and out of the semiconductor with little resistance. Titanium/gold (Ti/Au) layers have easily and reliably produced Ohmic contacts on β-Ga2O3, a thermodynamically stable polymorph of gallium oxide. Ti/Au layers have not, however, been able to form Ohmic contacts on ε-Ga2O3, another phase of Ga2O3 that is less stable but has higher crystallographic symmetry. This project tested whether Ti/Au contacts could form Ohmic contacts on ε-Ga2O3 following the same procedure of forming Ti/Au Ohmic contacts on β-Ga2O3 and ultimately concluded that they could not, owing to the high resistivity of the ε-Ga2O3.

Mentor

Dr. Lisa Porter